Modulation effects of photocarriers on the terahertz plasma-wave resonance in high-electron-mobility transistors under interband photoexcitation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 6 A, 2005, Pages 3842-3847

  Hanabe, Mitsuhiro ^a   Otsuji, Taiichi ^a   Ishibashi, Takuma ^a   Uno, Tomohiro ^a   Ryzhii, Victor ^b  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF AIZU   (Japan)

Author keywords

High electron mobility transistor (HEMT); Interband photoexcitation; Photocarriers; Plasma wave resonance; Terahertz

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; ELECTRON MOBILITY; FREQUENCIES; MODULATION; RESONANCE;

INTERBAND PHOTOEXCITATION; PHOTOCARRIERS; TERAHERTZ;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 23944442172     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.3842     Document Type: Article

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