Deep-level transient spectroscopy in InGaAsN lattice-matched to GaAs

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2002, Pages 1023-1026

  Johnston, S W ^a   Ahrenkiel, R K ^a   Friedman, D J ^a   Kurtz, Sarah R ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; COMPOSITION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; SEMICONDUCTING GALLIUM ARSENIDE; TEMPERATURE;

CAPACITANCE VOLTAGE TECHNIQUE; QUATERNARY SEMICONDUCTOR;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0036953453     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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