Characteristics of a terahertz photomixer based on a high-electron mobility transistor structure with optical input through the ungated regions

Journal of Applied Physics

Volumn 95, Issue 4, 2004, Pages 2084-2089

  Satou, A ^a   Ryzhii, V ^a   Khmyrova, I ^a   Ryzhii, M ^a   Shur, M S ^b  

^a UNIVERSITY OF AIZU   (Japan)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC WAVE PROPAGATION; ELECTROMAGNETIC WAVES; FREQUENCIES; LEAKAGE CURRENTS; LIGHT EMISSION; MATHEMATICAL MODELS; OPTICAL DEVICES; PLASMA OSCILLATIONS; SEMICONDUCTOR DEVICE MANUFACTURE; STRUCTURE (COMPOSITION); SUBSTRATES; THRESHOLD VOLTAGE;

DEVICE DESIGN; FREQUENCY DEPENDENT RESPONSIVITY; OPTICAL INPUT THROUGH UNGATED REGIONS; OPTICAL LOSS; PHOTOMIXER; RESONANT FREQUENCY; SIGNAL FREQUENCY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 1542366572     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1641953     Document Type: Article

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