On the role of the interface charge in non-ideal metal-semiconductor contacts

Applied Surface Science

Volumn 250, Issue 1-4, 2005, Pages 63-69

  Korošak, Dean ^a   Cvikl, Bruno ^a,b  

^a UNIVERSITY OF MARIBOR   (Slovenia)

^b JO EF STEFAN INSTITUTE   (Slovenia)

Author keywords

Admittance; Disorder; Ideality factor; Interface charge; Metal semiconductor interface; Schottky barrier

Indexed keywords

CAPACITANCE; CRYSTAL DEFECTS; ELECTRIC CHARGE; ELECTRIC POTENTIAL; ELECTRONIC STRUCTURE; INTERFACES (MATERIALS); SCHOTTKY BARRIER DIODES;

ADMITTANCE; DISORDER; IDEALITY FACTOR; INTERFACE CHARGE; METAL-SEMICONDUCTOR CONTACTS; METAL-SEMICONDUCTOR INTERFACES; SCHOTTKY BARRIER;

ELECTRIC CONTACTS;

EID: 23844550331     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.12.024     Document Type: Article

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