Fermi level pinning in Ag/Si Schottky structures prepared by ionized cluster beam technique

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4, 2002, Pages 1988-1989

  Korošak, Dean ^a,b   Cvikl, Bruno ^a  

^a UNIVERSITY OF MARIBOR   (Slovenia)

^b JO EF STEFAN INSTITUTE   (Slovenia)

Author keywords

DIGS model; Fermi level pinning; Ionized cluster beam deposition; Schottky barrier height; Silicon; Silver

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ELECTRONIC STRUCTURE; FERMI LEVEL; SILICON; SILVER;

DISORDER-INDUCED GAP STATE THEORY; FERMI LEVEL PINNING; IONIZED CLUSTER BEAM; SCHOTTKY BARRIER HEIGHT;

SCHOTTKY BARRIER DIODES;

EID: 0036529216     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.1988     Document Type: Article

References (12)