The microscopic model of Fermi level pinning in ionized cluster beam deposited Ag/n-Si Schottky structures

Vacuum

Volumn 61, Issue 2-4, 2001, Pages 349-353

  Korosak D ^a   Cvikl, B ^a,b  

^a UNIVERSITY OF MARIBOR   (Slovenia)

^b JO EF STEFAN INSTITUTE   (Slovenia)

Author keywords

Fermi level pinning; Green's functions; Ionized cluster beam deposition; Schottky barrier; Tight binding approximation

Indexed keywords

ACCELERATION; APPROXIMATION THEORY; DENSITY (SPECIFIC GRAVITY); ELECTRIC POTENTIAL; ENERGY GAP; FERMI LEVEL; GREEN'S FUNCTION; INTERFACES (MATERIALS); ION BEAM ASSISTED DEPOSITION; MATHEMATICAL MODELS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SILVER;

FERMI LEVEL PINNING; IONIZED CLUSTER BEAM (ICB) DEPOSITION; TIGHT BINDING APPROXIMATION;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0035858569     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(01)00280-9     Document Type: Conference Paper

References (9)

1. Cvikl B, Korošak D, Koželj M. Proceedings of the 34th International Conference on Microelectronics MIDEM-98. September 23-25, Rogaška Slatina, Slovenia, 1998. p. 107.
2. Cvikl B, Korošak D. 2001;61:355-9.
3. Sze SM. Physics of semiconductor devices, 2nd ed. New York: Wiley, 1981.
4. Heine V. Phys Rev 1965;138:1689.
5. Tejedor C, Flores F, Louis E. J Phys C 1977;10:2163.
6. Hasegawa H. Jpn J Appl Phys 1999;38:1098.
7. Tersoff J. Phys Rev B 1985;32:6968.
8. Leonard F, Tersoff J. preprint (cond-mat/).
9. Takagi T. Vacuum 1986;36:27.