Interfacial net charge density of nonintimate Schottky junctions

Journal of Applied Physics

Volumn 91, Issue 7, 2002, Pages 4281-4290

  Cvikl, B ^a,b   Korosak D ^a  

^a UNIVERSITY OF MARIBOR   (Slovenia)

^b JO EF STEFAN INSTITUTE   (Slovenia)

Author keywords

[No Author keywords available]

Indexed keywords

DEPLETION LAYER; DIFFERENTIAL CAPACITANCE; EFFECTIVE DENSITY; EMPIRICAL PARAMETERS; FREQUENCY DEPENDENT; FUNCTIONAL DEPENDENCE; GAP STATE; IONIZED CLUSTER BEAMS; NONIDEAL; ROOM TEMPERATURE; SCHOTTKY JUNCTIONS; SI SUBSTRATES;

BIAS VOLTAGE; CAPACITANCE; INTERFACES (MATERIALS);

INTERFACE STATES;

EID: 0036536112     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1453493     Document Type: Article

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