Influence of the heterostructure design on noise figure of AlGaN/GaN HEMTs

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2004, Pages 43-44

  Sanabria, Christopher ^a   Xu, Hongtao ^a   Palacios, Tomás ^a   Chakraborty, Arpan ^a   Heikman, Sten ^a   Mishra, Umesh K ^a   York, Robert A ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; EPILAYER STRUCTURES; GATE LENGTH; NOISE PARAMETERS;

EQUIVALENT CIRCUITS; GALLIUM NITRIDE; HETEROJUNCTIONS; MATHEMATICAL MODELS; MICROWAVES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; SPURIOUS SIGNAL NOISE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 18044367507     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2004.1367775     Document Type: Conference Paper

References (3)

1. W. Lu, V. Kumar, R. Schwindt, E. Piner, and I. Adesida, "DC, RF, and microwave noise performance of AlGaN/GaN HEMTs on sapphire substrates," IEEE Trans. Microwave Theory Tech., vol. 50, pp. 2499-2503, Nov. 2002.
2. W. Lu, V. Kumar, R. Schwindt, E. Finer, and I. Adesida, "DC, RF, and microwave noise performance of AlGaN/GaN HEMTs on aluminum concentration," IEEE Trans. Electron Devices, vol. 50, pp. 2499-2503, Apr. 2003.
3. J. S. Moon, M. Micovic, A. Kurdoghlian, P. Janke, P. Hashimoto, W.-S. Wong, L. McCray, and C. Nguyen, "Microwave noise performance of AlGaN-GaN HEMTs with small DC power dissipation," IEEE Electron Devices Lett., vol. 23, pp. 637-639, Nov. 2002.