Al0.3Ga0.7N/Al0.05Ga0.95N/GaN composite-channel HEMTs with enhanced linearity

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 811-814

  Liu, Jie ^a   Zhou, Yugang ^a   Chu, Rongming ^a   Cai, Yong ^a   Chen, Kevin J ^a   Lau, Kei May ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CODE DIVISION MULTIPLE ACCESS; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; LINEARIZATION; NATURAL FREQUENCIES; NUCLEATION; POWER AMPLIFIERS; REACTIVE ION ETCHING; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE; ALUMINUM ALLOYS; ALUMINUM GALLIUM NITRIDE; CUTOFF FREQUENCY; GALLIUM ALLOYS; HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTOR ALLOYS;

ADJACENT CHANNEL LEAKAGE RATIO (ACLR); CARRIER DISTRIBUTION; CONDUCTION BANDS; CUTOFF FREQUENCIES;

HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS;

AL COMPOSITION; ALGAN LAYERS; CHANNEL ENGINEERING; CHANNEL REGION; COMPOSITE CHANNEL HEMT; HIGH CURRENTS; LOW CURRENTS; LOW-HIGH; PEAK VALUES; THROUGH CHANNEL;

EID: 21644461729     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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