A novel P-channel nitride-trapping nonvolatile memory device with excellent reliability properties

IEEE Electron Device Letters

Volumn 26, Issue 8, 2005, Pages 583-585

  Lue, Hang Ting ^a   Hsieh, Kuang Yeu ^a   Liu, Rich ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

Band to band tunneling induced hot electron (BTBTHE); Nitride trapping; NROM; P channel; SONOS

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRON TUNNELING; GATES (TRANSISTOR); MOS DEVICES; ROM; SEMICONDUCTOR JUNCTIONS;

BAND-TO-BAND TUNNELING INDUCED HOT ELECTRON (BTBTHE); NROM; P CHANNEL NITRIDE TRAPPING; SONOS;

NONVOLATILE STORAGE;

EID: 23844449969     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.852742     Document Type: Article

References (8)

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