Photoreflectance and surface photovoltage spectroscopy of beryllium-doped GaAs/AlAs multiple quantum wells

Journal of Applied Physics

Volumn 98, Issue 2, 2005, Pages

  Cechavicius B ^a   Kavaliauskas, J ^a   Krivaite, G ^a,b   Seliuta, D ^a,b   Valusis G ^a,b   Halsall, M P ^c   Steer, M J ^d   Harrison, P ^e  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b VILNIUS GEDIMINAS TECHNICAL UNIVERSITY   (Lithuania)

^c UNIVERSITY OF MANCHESTER   (United Kingdom)

^d UNIVERSITY OF SHEFFIELD   (United Kingdom)

^e UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENTIAL SURFACE PHOTOVOLTAGE (DSPV); PHOTOREFLECTANCE; SURFACE PHOTOVOLTAGE (SPV); TERAHERTZ (THZ) SENSORS;

ABSORPTION; ALUMINUM COMPOUNDS; BERYLLIUM; CONCENTRATION (PROCESS); DOPING (ADDITIVES); ELECTRIC FIELDS; FABRICATION; MOLECULAR BEAM EPITAXY; OPTICAL SENSORS; SEMICONDUCTOR QUANTUM WELLS; SENSITIVITY ANALYSIS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 23844437009     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1978970     Document Type: Article

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