Terahertz emission from electrically pumped gallium doped silicon devices

Applied Physics Letters

Volumn 85, Issue 17, 2004, Pages 3660-3662

  Lv, P C ^a   Troeger, R T ^a   Kim, S ^a   Ray, S K ^a,d   Goossen, K W ^a   Kolodzey, J ^a   Yassievich, I N ^b   Odnoblyudov, M A ^b   Kagan, M S ^c  

^a UNIVERSITY OF DELAWARE   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

^c INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

^d INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

QUANTUM CASCADE LASERS (QCL); RESONANT STATE LASERS (RSL); SILICON DEVICES; TERAHERTZ EMISSION;

CRYSTAL IMPURITIES; ELECTROLUMINESCENCE; ELECTROMAGNETIC WAVE EMISSION; GALLIUM; OPTICAL PUMPING; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTING SILICON;

EID: 9744235832     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1808878     Document Type: Article

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