Effect of quantum confinement on shallow acceptor transitions in δ-doped GaAs/AlAs multiple-quantum wells

Applied Physics Letters

Volumn 84, Issue 5, 2004, Pages 735-737

  Zheng, W M ^a   Halsall, M P ^a   Harmer, P ^a   Harrison, P ^b   Steer, M J ^c  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b UNIVERSITY OF LEEDS   (United Kingdom)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); CRYOSTATS; ENERGY ABSORPTION; ENERGY TRANSFER; EXCITONS; GROUND STATE; LASER BEAM EFFECTS; LIGHT REFLECTION; MOLECULAR BEAM EPITAXY; MOLECULAR STRUCTURE; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS; THICKNESS MEASUREMENT;

OPTICAL EXCITATION; QUANTUM CONFINEMENT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 1242286917     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1644912     Document Type: Article

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