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Volumn 83, Issue 18, 2003, Pages 3719-3721

Effect of quantum-well confinement on acceptor state lifetime in δ-doped GaAs/AlAs multiple quantum wells

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; GROUND STATE; LOW TEMPERATURE EFFECTS; RELAXATION PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SPECTROSCOPY;

EID: 0344066265     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1623950     Document Type: Article
Times cited : (13)

References (22)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.