Photoluminescence study of exciton-optical phonon scattering in bulk GaAs and GaAs quantum wells

Journal of Applied Physics

Volumn 87, Issue 4, 2000, Pages 1858-1862

  Venu Gopal, A ^a   Kumar, Rajesh ^a   Vengurlekar, A S ^a   Bosacchi, A ^b   Franchi, S ^b   Pfeiffer, L N ^c  

^a TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

^b Ist Mat Speciali per E   (Italy)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013086475     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.372104     Document Type: Article

References (26)

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26. We had earlier found that exciton-optical phonon scattering strength is larger in ID than in 2D [Gopal et al., Appl. Phys. Lett. 74, 2474 (1999]. Here, we believe that the effects of additional exciton confinement in ID have the most dominant effect.