Acceptor binding energy in δ-doped GaAs/AlAs multiple-quantum wells

Journal of Applied Physics

Volumn 92, Issue 10, 2002, Pages 6039-6042

  Zheng, W M ^a   Halsall, M P ^a   Harmer, P ^a   Harrison, P ^b   Steer, M J ^c  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b UNIVERSITY OF LEEDS   (United Kingdom)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR-BOUND EXCITONS; GAAS; PHOTOLUMINESCENCE SPECTRUM; VARIATIONAL CALCULATION; WELL WIDTH;

BINDING ENERGY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; VARIATIONAL TECHNIQUES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037113068     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1516872     Document Type: Article

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