Optical and terahertz characterization of be-doped GaAs/AlAs multiple quantum wells

Acta Physica Polonica A

Volumn 107, Issue 2, 2005, Pages 328-332

  Cechavicius B ^a   Kavaliauskas, J ^a   Krivaite, G ^a   Seliuta, D ^a   Sirmulis E ^a   Devenson, J ^a   Valusis G ^a   Sherliker, B ^b   Halsall, M P ^b   Steer, M J ^c   Harrison, P ^d  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

^d UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; BERYLLIUM; ELECTRIC FIELDS; IMPURITIES; INTERFACES (MATERIALS); MATRIX ALGEBRA; OSCILLATIONS; PHOTOCURRENTS; PHOTOIONIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

DOPING DENSITIES; INTERBAND TRANSITION ENERGIES; SURFACE PHOTOVOLTAGES; TERAHERTZ DEVICES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 20044369700     PISSN: 05874246     EISSN: None     Source Type: Journal    
DOI: 10.12693/APhysPolA.107.328     Document Type: Conference Paper

References (6)

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