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Volumn 39, Issue 1, 2003, Pages 49-57

High quality 80 Gbit/s InP DHBT selector and its use for NRZ-RZ conversion

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONVERTERS; ELECTRIC NETWORK ANALYSIS; FABRICATION; TIMING JITTER; TRANSISTORS;

EID: 0037426996     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030103     Document Type: Article
Times cited : (15)

References (6)
  • 1
    • 0031121765 scopus 로고    scopus 로고
    • 60 Gbit/s time-division multiplexer in SiGe-bipolar technology with special regard to mounting and measuring technique
    • MȮLLER, M., REIN, H.-M., FEEDER, A., and MEISTER, T.: '60 Gbit/s time-division multiplexer in SiGe-bipolar technology with special regard to mounting and measuring technique', Electron. Lett., 1997, 33, (8), pp. 679-680
    • (1997) Electron. Lett. , vol.33 , Issue.8 , pp. 679-680
    • Moller, M.1    Rein, H.-M.2    Feeder, A.3    Meister, T.4
  • 2
    • 0001477057 scopus 로고    scopus 로고
    • An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs
    • OTSUJI, T., MURATA, K., ENOKI, T., and UMEDA, Y.: 'An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs', IEEE J Solid-State Circuits, 1998, 33, (9), pp. 1321-1327
    • (1998) IEEE J Solid-State Circuits , vol.33 , Issue.9 , pp. 1321-1327
    • Otsuji, T.1    Murata, K.2    Enoki, T.3    Umeda, Y.4
  • 5
    • 0037046463 scopus 로고    scopus 로고
    • Very-high-speed selector IC using InP/InGaAs heterojunction bipolar transistors
    • ISHII, K., MURATA, K., IDA, M., KURISHIMA, K., ENOKI, T., SHIBATA, T., and SANO, E.: 'Very-high-speed selector IC using InP/InGaAs heterojunction bipolar transistors', Electron. Lett., 2002, 38, (10), pp. 480-481
    • (2002) Electron. Lett. , vol.38 , Issue.10 , pp. 480-481
    • Ishii, K.1    Murata, K.2    Ida, M.3    Kurishima, K.4    Enoki, T.5    Shibata, T.6    Sano, E.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.