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1
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0031121765
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60 Gbit/s time-division multiplexer in SiGe-bipolar technology with special regard to mounting and measuring technique
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MȮLLER, M., REIN, H.-M., FEEDER, A., and MEISTER, T.: '60 Gbit/s time-division multiplexer in SiGe-bipolar technology with special regard to mounting and measuring technique', Electron. Lett., 1997, 33, (8), pp. 679-680
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Moller, M.1
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Meister, T.4
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0001477057
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An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs
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OTSUJI, T., MURATA, K., ENOKI, T., and UMEDA, Y.: 'An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs', IEEE J Solid-State Circuits, 1998, 33, (9), pp. 1321-1327
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Otsuji, T.1
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0036224869
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A 90 Gbit/s 2:1 multiplexer IC in InP-based HEMT technology
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San Francisco, February, Paper 11.7
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SUZUKI, T., NAKASHA, Y., TAKAHASHI, T., MAKIYAMA, K., IMANISHI, K., HIROSE, I., and WATANABE, Y.: 'A 90 Gbit/s 2:1 multiplexer IC in InP-based HEMT technology'. Proceeding of ISSCC 2002, San Francisco, February 2002, Paper 11.7, p. 148 and 442
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Proceeding of ISSCC 2002
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Suzuki, T.1
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Takahashi, T.3
Makiyama, K.4
Imanishi, K.5
Hirose, I.6
Watanabe, Y.7
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4
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0035446560
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InGaAs/InP DHBT technology and design methodology for over 40 Gbit/s optical communication circuits
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ANDRÉ, P., BLAYAC, S., BERDAGUER, P., BENCHIMOL, J.-L., GODIN, J., KAUFFMANN, N., KONCZYKOWSKA, A., KASBARI, A.-E., and RIET. M.: 'InGaAs/InP DHBT technology and design methodology for over 40 Gbit/s optical communication circuits', IEEE J. Solid-State Circuits, 2001, 36, pp. 1321-1326
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André, P.1
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Benchimol, J.-L.4
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Kauffmann, N.6
Konczykowska, A.7
Kasbari, A.-E.8
Riet, M.9
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5
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0037046463
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Very-high-speed selector IC using InP/InGaAs heterojunction bipolar transistors
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ISHII, K., MURATA, K., IDA, M., KURISHIMA, K., ENOKI, T., SHIBATA, T., and SANO, E.: 'Very-high-speed selector IC using InP/InGaAs heterojunction bipolar transistors', Electron. Lett., 2002, 38, (10), pp. 480-481
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0036051198
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MSI InP/InGaAs DHBT technology: Beyond 40 Gbit/s circuits
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14th Indium Phosphide and Related Materials Conference, Stockholm, Sweden, May
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BLAYAC, S., RIET, M., BENCHIMOL, J.L., ALEXANDRE, F., BERDAGUER, P., KAHN, M., PINQUIER, A., DUTISSEUIL, E., MOULU, J., KASBARI, A.E., KONCZYKOWSKA, A., and GODIN, J: 'MSI InP/InGaAs DHBT technology: beyond 40 Gbit/s circuits'. 14th Indium Phosphide and Related Materials Conference, in Proc. IPRM 2002, Stockholm, Sweden, May 2002, Vol. B1-4, pp. 51-54
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Blayac, S.1
Riet, M.2
Benchimol, J.L.3
Alexandre, F.4
Berdaguer, P.5
Kahn, M.6
Pinquier, A.7
Dutisseuil, E.8
Moulu, J.9
Kasbari, A.E.10
Konczykowska, A.11
Godin, J.12
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