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Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2004, Pages 191-194

Depletion/enhancement mode InAlAs/InGaAs - MOSHEMTs with nm - Thin gate insulating layers formed by oxidation of the InAlAs layer

(5) Nakamura, K a Paul, N C a Takebe, M a Iiyama, K a Takamiya, S a

a KANAZAWA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL BONDS; ETCHING; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; OXIDATION; PHOTOLUMINESCENCE; TRANSCONDUCTANCE;

NITRIDATION; OXINITRIDATION; PHOTOLUMINESCENCE INTENSITY; PHOTOLUMINESCENCE SPECTRA;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 23744486677 PISSN: 10928669 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (2)

References (5)

1
- 0001937255
- Low leakage High breakdown voltage and high transconductance insulated gate PHEMTs utilizing silicon interface control layer
- Aug. 2000, Kyoto, Japan, abstract
- Y. G. Xie, S. Kasai, H. Takahashi, C. Jiang, and H. Hasegawa, "Low leakage High breakdown voltage and high transconductance insulated gate PHEMTs utilizing silicon interface control layer," Topical Workshop on Heterostructure Microelectronics, Aug. 2000, Kyoto, Japan, abstract, pp.24-25 (2000)
- (2000) Topical Workshop on Heterostructure Microelectronics , pp. 24-25
- Xie, Y.G.¹ Kasai, S.² Takahashi, H.³ Jiang, C.⁴ Hasegawa, H.⁵

2
- 18744428336
- Structural and electrical characterization of oxidated, nitridated and oxi-nitridated (100) GaAs surfaces
- N. C. Paul, K. Nakamura, M. Takebe, A. Takemoto, T. Inokuma, K. Iiyama, S. Takamiya, K. Higashimine, N. Ohtsuka and Y. Yonezawa, ' 'Structural and Electrical Characterization of Oxidated, Nitridated and Oxi-nitridated (100) GaAs surfaces," Jpn. J. Appl. Phys. 42, pp. 4264-4272, (2003)
- (2003) Jpn. J. Appl. Phys. , vol.42 , pp. 4264-4272
- Paul, N.C.¹ Nakamura, K.² Takebe, M.³ Takemoto, A.⁴ Inokuma, T.⁵ Iiyama, K.⁶ Takamiya, S.⁷ Higashimine, K.⁸ Ohtsuka, N.⁹ Yonezawa, Y.¹⁰

3
- 1642332273
- GaAs-MISFETs with insulating gate films formed by direct oxidation and oxi-nitridation of recessed GaAs surfaces
- in print
- M. Takebe, K. Nakamura, N. C. Paul, K. Iiyama and S. Takamiya, 'GaAs-MISFETs with Insulating Gate Films Formed by Direct Oxidation and Oxi-nitridation of Recessed GaAs Surfaces," IEEE Trans. Electron Devices, 51, 3, in print (2004)
- (2004) IEEE Trans. Electron Devices , vol.51 , pp. 3
- Takebe, M.¹ Nakamura, K.² Paul, N.C.³ Iiyama, K.⁴ Takamiya, S.⁵

4
- 23744460741
- Extended abstract, IPRM
- H. Seto, S. Miyamura, T. Inokuma, K. Iiyama and S. Takamiya, "Mechanical Stress Caused by Adsorption of O or N on a Ga-terminated (100) GaAs Surface: O Gives Compressive Stress but N Don't" Extended abstract, IPRM (2004)
- (2004) Mechanical Stress Caused by Adsorption of O or N on A Ga-terminated (100) GaAs Surface: O Gives Compressive Stress but N Don't
- Seto, H.¹ Miyamura, S.² Inokuma, T.³ Iiyama, K.⁴ Takamiya, S.⁵

5
- 0034497969
- 2 plasma damage on AlGaAs/InGaAs/GaAs high Electron mobility transistor. I. DC characteristics
- 2 plasma damage on AlGaAs/InGaAs/GaAs high Electron mobility transistor. I. DC characteristics," Solid-State Electronics, 44, pp. 2101 -2108 (2000)
- (2000) Solid-state Electronics , vol.44 , pp. 2101-2108
- Trivedi, V.P.¹ Hsu, C.H.² Luo, B.³ Cao, X.⁴ Lorache, J.R.⁵ Ren, F.⁶ Pearton, S.J.⁷ Abernathy, C.R.⁸ Lambers, E.⁹ Hoppe, M.¹⁰ Wu, C.S.¹¹ Sasserath, J.¹² Lee, J.W.¹³ Mackenzie, K.¹⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.