Effect of N2 plasma damage on AlGaAs/InGaAs/GaAs high electron mobility transistors. I. DC characteristics

Solid-State Electronics

Volumn 44, Issue 12, 2000, Pages 2101-2108

  Trivedi, V P ^a   Hsu, C H ^b   Luo, B ^a   Cao, X ^a   Lorache, J R ^a   Ren, F ^a   Pearton, S J ^a   Abernathy, C R ^a   Lambers, E ^a   Hoppe, M ^c   Wu, C S ^c   Sasserath, J ^d   Lee, J W ^d   Mackenzie, K ^d  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b FENG CHIA UNIVERSITY   (Taiwan)

^c NORTHROP GRUMMAN CORPORATION   (United States)

^d Plasma Therm IP   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC BREAKDOWN OF SOLIDS; ION BOMBARDMENT; PLASMA THEORY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SURFACE ROUGHNESS; TRANSCONDUCTANCE;

GATE IDEALITY FACTORS; INDUCTIVELY COUPLED PLASMAS (ICP);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034497969     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00150-7     Document Type: Article

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