Fabrication and characterisation of high quality ZnO thin films by reactive electron beam evaporation technique

Microelectronics Journal

Volumn 36, Issue 8, 2005, Pages 694-699

  Al Asmar, R ^a,c   Ferblantier, G ^a   Sauvajol, J L ^b   Giani, A ^a   Khoury, A ^c   Foucaran, A ^a  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b CNRS   (France)

^c Faculte des Sciences II   (Lebanon)

Author keywords

Annealing treatment; Electron beam evaporation; Growth temperature; Optical transmittance; Raman measurements; Zinc oxide

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; EVAPORATION; GRAIN SIZE AND SHAPE; LASER ABLATION; OPACITY; PYROLYSIS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; X RAY DIFFRACTION; ZINC OXIDE;

AIR ANNEALING; ANNEALING TREATMENT; GROWTH TEMPERATURE; RAMAN MEASUREMENT; REACTIVE ELECTRON BEAM EVAPORATION; SILICON SUBSTRATES;

THIN FILMS;

EID: 23744446739     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2005.02.119     Document Type: Article

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