90 nm device validation of the use of a single-wafer, high-current implanter for high tilt halo implants

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 237, Issue 1-2, 2005, Pages 53-57

  Felch, S B ^a   Foad, M A ^a   Olsen, C ^a   Nouri, F ^a   Matsunaga, Y ^a   Natsuaki, N ^a  

^a APPLIED MATERIALS INC   (United States)

Author keywords

Halo implants; High tilt implants; Ion implantation

Indexed keywords

CMOS INTEGRATED CIRCUITS; SEMICONDUCTOR DOPING; SENSITIVITY ANALYSIS; SILICON WAFERS; THROUGHPUT;

HALO IMPLANTS; HIGH TILT IMPLANTS; MEDIUM-CURRENT IMPLANTER; SHORT-CHANNEL EFFECTS;

ION IMPLANTATION;

EID: 23444458117     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.04.076     Document Type: Conference Paper

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