Implications of halo and well implant conditions on sub-140nm device technologies

Proceedings of the International Conference on Ion Implantation Technology

Volumn 22-27-September-2002, Issue , 2002, Pages 369-372

  Foad, Majeed A ^a   Doherty, Roisin ^a   Mitsuda, Katsuhiro ^b   Honda, Mitsuharu ^b   Ikeda, Shuji ^b   Ito, Hiro ^c   Matsunaga, Yasuhiko ^c   Hess, David ^d  

^a APPLIED MATERIALS INC   (United States)

^b HITACHI LTD   (Japan)

^c Applied Materials Japan   (Japan)

^d ATMEL CORPORATION   (United States)

Author keywords

Implant Systems; Process Control and Yield

Indexed keywords

ION IMPLANTATION; THRESHOLD VOLTAGE;

ANGLE EFFECTS; DEVICE COMPLEXITY; DEVICE TECHNOLOGIES; DEVICE WAFERS; HALO IMPLANTS; ION IMPLANT; PMOS DEVICES; SENSITIVITY STUDIES;

IONS;

EID: 84961347600     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IIT.2002.1258017     Document Type: Conference Paper

References (0)