Impact of tilt angle variation on device performance

Proceedings of the International Conference on Ion Implantation Technology

Volumn 22-27-September-2002, Issue , 2002, Pages 44-47

  Lenoble, D ^a   Wacquant, F ^a   Josse, E ^a   Arnaud, F ^a  

^a STMICROELECTRONICS   (France)

Author keywords

advanced CMOS device; high tilt angle control

Indexed keywords

CMOS INTEGRATED CIRCUITS; ION IMPLANTATION; IONS; MOS DEVICES; PHOTORESISTS; THRESHOLD VOLTAGE;

ADVANCED CMOS DEVICE; ADVANCED TECHNOLOGY; ELECTRICAL PARAMETER; HIGH TILT ANGLE; HIGH TILT IMPLANTS; IMPLANTATION PROCESS; SHORT-CHANNEL EFFECT; TRANSISTOR ARCHITECTURE;

SENSITIVITY ANALYSIS;

EID: 84961315262     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IIT.2002.1257934     Document Type: Conference Paper

References (5)

1. J.C. Olson, A. Renau, "Control channeling uniformity for advanced applications", IIT 2000 Proceedings, Alpbach, 2000
2. Axcelis, "Angle integrity concerns in single-wafers and multi-wafers implanters", private communication
3. D. Lenoble, STMicroelectronics technical note, internal communication
4. L. Rubin, "Angle control in high-current ion implanters", Solid State Technology, Oct. 2002
5. S. Mehta, U. Jeong, N. Variam, "Critical doping requirements in the design of advanced devices", these proceedings