Beam angle control on the VIISta 80 ion implanter

Proceedings of the International Conference on Ion Implantation Technology

Volumn 22-27-September-2002, Issue , 2002, Pages 193-196

  Campbell, Christopher ^a   Cummings, James ^a   Lindberg, Robert ^a   Olson, Joseph C ^a   Radovanov, Svetlana B ^a   Smatlak, Donna L ^a  

^a VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

Automatic control; CMOS process; CMOS technology; Control systems; Goniometers; Implants; Ion beams; Laser beams; Monitoring; Parallel processing

Indexed keywords

AUTOMATION; CMOS INTEGRATED CIRCUITS; CONTROL; CONTROL SYSTEMS; DENTAL PROSTHESES; DESIGN; FLIGHT CONTROL SYSTEMS; GONIOMETERS; ION BEAMS; ION IMPLANTATION; IONS; LASER BEAMS; MONITORING; PARALLEL PROCESSING SYSTEMS; SILICON WAFERS;

BEAM INCIDENCE ANGLE; CMOS PROCESSS; CMOS TECHNOLOGY; DEVICE PERFORMANCE; MEASUREMENT ACCURACY; MEASUREMENT AND CONTROL SYSTEMS; PARALLEL PROCESSING; VERIFICATION DATA;

PROCESS CONTROL;

EID: 84961379175     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IIT.2002.1257971     Document Type: Conference Paper

References (2)

1. Ukyo Jeong, Sandeep Mehta, Chris Campbell," Effects of Beam Incident Angle Control on NMOS Source/Drain Extension Applications" IIT 2002.
2. J.C. Olson, A. Renau, J. Buff, "Scanned Beam Uniformity Control in the VIISta 810 Ion Implanter," 1998 International Conference on Ion Implantation Technology Proceedings, Kyoto, Japan, J. Matsuo, G. Takaoka and I. Yamada, eds., Piscataway, NJ:OEEE 1999, pp. 169-172.