Precision halo control with antimony and indium on Axcelis medium current ion implanters

Proceedings of the International Conference on Ion Implantation Technology

Volumn 22-27-September-2002, Issue , 2002, Pages 279-282

  Luckman, G ^a   Harris, M ^a   Rathmell, R D ^a   Kopalidis, P ^a   Ray, A M ^a   Sato, F ^b   Sano, M ^b  

^a AXCELIS TECHNOLOGIES   (United States)

^b Sumitomo Eaton Nova Corp   (Japan)

Author keywords

CMOS technology; Electrostatic measurements; Fabrication; Geometry; Implants; Indium; Lenses; Magnetic separation; Shadow mapping; Throughput

Indexed keywords

CMOS INTEGRATED CIRCUITS; DENTAL PROSTHESES; FABRICATION; GEOMETRY; HEAVY IONS; ION IMPLANTATION; LENSES; MAGNETIC SEPARATION; THROUGHPUT;

ADVANCED CMOS DEVICE; CHANNELING CONDITIONS; CMOS TECHNOLOGY; DEVICE GEOMETRIES; ELECTROSTATIC MEASUREMENTS; PROCESS PERFORMANCE; SHADOW MAPPINGS; SHORT-CHANNEL EFFECT;

INDIUM;

EID: 84961387269     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IIT.2002.1257993     Document Type: Conference Paper

References (11)

1. K.Miyashita, H.Yoshimura, M.Takayanagi, M.Fujiwara, K.Adachi, T.Nakayama, and Y.Toyoshima, "Optimized halo structure for 80 nm physical gate CMOS technology with indium and antimony highly angled ion implantation," IEDM Technical Digest, pp. 645-648, 1999.
2. H.C.-H.Wang, C.-C.Wang, C.-H.Hsieh, S.-Y.Lu, M.-C.Chiang, Y.-L.Chu, C.-J.Chen, T.-C.Ong, T.Wong, P.B.Griffin, and C.H.Diaz, "Antimony assisted arsenic S/D Extension (A3SDE) Engineering for Sub-0.1 mm nMOSFETs: A novel approach to steep and retrograde indium pocket profiles," 2001 IEDM Technical Digest, pp. 63-66, 2001.
3. J.M.Harlan and K. Petry, "Overview of the Eaton 8250 Medium Current Implanter," in IEEE 1998 International Conference on Ion Implantation Technology Proceedings, Kyoto, Japan, pp. 266-269.
4. O. F. Campbell, A. M. Ray, M. Sugitani, and F. Sato, "Introducing the MC3 Medium Current 300 mm Implanter," in IEEE 1998 International Conference on Ion Implantation Technology Proceedings, Kyoto, Japan, pp. 154-157.
5. R.D.Rathmell, A.M.Ray, F.Sato, and C.J.Godfrey, "Process performance for MC3 300 mm implanter," IEEE 2000 International Conference on Ion Implantation Technology Proceedings, Alpbach, Austria, pp. 364-367.
6. R.D.Rathmell, D.E.Kamenitsa, M.L.King, and A.M.Ray, "Beam parallelism in the 8250 medium current implanter", IEEE 1998 International Conference on Ion Implantation Technology Proceedings, Kyoto, Japan, pp. 392-395.
7. R. Simonton and A.F.Tasch, "Channeling effects in ion implantation into silicon," Ion Implantatioon Science and Technology, J.F. Ziegler, ed., Yorktown NY, Ion Implantation Technology Co., 2000, pp. 293-390.
8. M. Sano, M. Harada, M. Kabasawa, F. Sato, and M. Sugitani, "Dose monitoring of heavy ion implantation by Therma Wave signal," these proceedings.
9. D.E.Kamenitsa and R.B.Simonton, "Sources of variation in Therma-Wave measurements of ion implanted wafers," Nucl. Inst. And Meth., B74 (1993), pp. 234-237.
10. R.F. Reihl, G.A. Smith, W. Katz, and E.F. Koch, "Migration of implanted indium in silicon as a function of thermal annealing," Appl. Phys. Lett., 42 (1983), pp. 575-576.
11. S.M. Sze and J.C.Irvine, "Resistivity, mobility, and impurity levels in GaAs, Ge, and Si at 300 k," Solid State Electronics, 11 (1068), p. 559.