Novel methods of p-type activation in Mg-doped GaN

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 11, 2002, Pages 6260-6262

  Takeya, Motonobu ^a   Ikeda, Masao ^a  

^a SONY CORPORATION   (Japan)

Author keywords

Low temperature long time annealing; P type activation; Photoluminescence (PL); Radio frequency (RF)

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; MAGNESIUM PRINTING PLATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

ACCEPTOR DOPANT; HOLE CONCENTRATION; LOW-TEMPERATURE LONG TIME ANNEALING; NONRADIATIVE RECOMBINATION PROCESS; RADIO FREQUENCY INPUT ACTIVATION METHOD;

GALLIUM NITRIDE;

EID: 0036150514     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.6260     Document Type: Article

References (8)