Structural characterization of group III nitrides grown by pulsed laser deposition

Thin Solid Films

Volumn 457, Issue 1, 2004, Pages 114-117

  Takahashi, H ^a   Fujioka, H ^a,b   Ohta, J ^a   Oshima, M ^a   Kimura, M ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

^c NIPPON STEEL CORPORATION   (Japan)

Author keywords

Laser ablation; Nitrides; Structural properties; X ray diffraction

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; HIGH ENERGY ELECTRON DIFFRACTION; KINETIC ENERGY; LASER ABLATION; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; PULSED LASER DEPOSITION; SYNCHROTRON RADIATION; THERMAL EXPANSION; THIN FILMS; X RAY DIFFRACTION;

BUFFER LAYERS; LATTICE DISTORTION; STRUCTURAL PROPERTIES;

NITRIDES;

EID: 2342541052     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.12.004     Document Type: Conference Paper

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