Generalized grazing incidence-angle x-ray diffraction studies on InAs quantum dots on Si (100) substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 B, 2000, Pages 4483-4485

  Uragami, Takeshi ^a   Fujioka, Hiroshi ^a   Waki, Ichitaro ^a   Mano, Takaaki ^a   Ono, Kanta ^a   Oshima, Masaharu ^a   Takagi, Yasuo ^b   Kimura, Masao ^b   Suzuki, Tamaki ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b NIPPON STEEL CORPORATION   (Japan)

Author keywords

Grazing incidence angle x ray diffraction; InAs; Lattice strain; Out of plane diffraction spot; Quantum dot

Indexed keywords

ARSENIC; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DENSITY (OPTICAL); DIFFRACTION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; INDIUM COMPOUNDS; SILICON; STRAIN; X RAY DIFFRACTION ANALYSIS;

DIFFRACTION SPOTS; DILATED; EPITAXIAL FILMS; GENERALIZED GRAZING INCIDENCE-ANGLE X-RAY DIFFRACTION(G-GIXD); INDIUM ARSENIDE QUANTUM DOTS; LATTICE MISMATCH; MACROSCOPIC STRAIN MODELS; SURFACE COVERAGE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034224164     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.4483     Document Type: Article

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