Effect of heat treatment on the oxygen content and resistivity in sputtered NiO films

Journal of Magnetism and Magnetic Materials

Volumn 226-230, Issue PART II, 2001, Pages 1629-1630

  Kohmoto, O ^a   Nakagawa, H ^a   Isagawa, Y ^a   Chayahara, A ^b  

^a OKAYAMA UNIVERSITY   (Japan)

^b National Institute of Materials and Chemical Research   (Japan)

Author keywords

Antiferromagnets; Oxygen stoichiometry; Resistivity; Thin films

Indexed keywords

ELECTRIC CONDUCTIVITY; HEAT TREATMENT; MAGNETIC SEMICONDUCTORS; NICKEL;

ANNEALING TEMPERATURES; ANTIFERROMAGNETS; AS-SPUTTERED FILMS; EFFECT OF HEAT TREATMENTS; NIO FILMS; OXYGEN CONTENT; OXYGEN STOICHIOMETRY; P TYPE SEMICONDUCTOR;

THIN FILMS;

EID: 33748686987     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-8853(00)01043-X     Document Type: Article

References (4)

1. T.C. Anthony, J.A. Brug, S. Zhang, IEEE Trans. Magn. 30 (1994) 3819.
2. S. Nagakura (Ed.), Iwanami Dictionary of Physics and Chemistry, 3rd Edition, Iwanami, Tokyo, 1998, p. 536 (in Japanese).
3. N. Oshima, M. Nakada, Y. Tsukamoto, Jpn. J. Appl. Phys. 35 (1996) 1585.
4. O. Kohmoto, H. Nakagawa, F. Ono, A. Chayahara, J. Magn. Magn. Mater., this conference.