A study of the formation of nanometer-scale cavities in helium-implanted 4H-SiC

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 218, Issue 1-4, 2004, Pages 53-60

  Zhang, C H ^a   Donnelly, S E ^b   Vishnyakov, V M ^b   Evans, J H ^c   Shibayama, T ^d   Sun, Y M ^a  

^a INSTITUTE OF MODERN PHYSICS   (China)

^b UNIVERSITY OF SALFORD   (United Kingdom)

^c Hokkaido University ^*  (United Kingdom)

^d HOKKAIDO UNIVERSITY   (Japan)

Author keywords

4H SiC; Bubbles; Helium; Modeling; RBS channeling; TEM

Indexed keywords

ANNEALING; DEFORMATION; HELIUM; ION IMPLANTATION; MATHEMATICAL MODELS; MICROSTRUCTURE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; VACUUM;

4H-SIC; ION-FLUENCE RANGE; MODELING; RBS-CHANNELING;

HYDROGEN INORGANIC COMPOUNDS;

EID: 2342478538     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.12.082     Document Type: Conference Paper

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