Barrier properties of Ta-Si-N films in Ag-and Au-containing metallization

Vacuum

Volumn 74, Issue 2, 2004, Pages 195-199

  Kuchuk, A V ^a   Ciosek, J ^a   Piotrowska, A ^a   Kaminska, E ^a   Wawro, A ^b   Lytvyn, O S ^c   Nowicki, L ^d   Ratajczak, R ^d  

^a Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^b INSTITUTE OF PHYSICS   (Poland)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^d SOLTAN INSTITUTE FOR NUCLEAR STUDIES   (Poland)

Author keywords

Diffusion barrier; Magnetron sputtering; Metallization; Thin films

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; COMPOSITION; DIFFUSION; MAGNETRON SPUTTERING; METALLIZING; PARAMETER ESTIMATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SUBSTRATES; THIN FILMS;

CHEMICAL INERTNESS; DEVICE PERFORMANCE; DIFFUSION BARRIERS; POST-DEPOSITION TREATMENT;

METALLIC FILMS;

EID: 2342477266     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2003.12.121     Document Type: Conference Paper

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