Modified transmission line model and its application to aluminum ohmic contacts with n-type GaN

Applied Physics Letters

Volumn 84, Issue 14, 2004, Pages 2584-2586

  Chen, N C ^a   Chang, P H ^a   Chiu, A P ^a   Wang, M C ^a   Feng, W S ^a   Wu, G M ^a   Shih, C F ^b   Liu, K S ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BESSEL FUNCTIONS; COMPUTER SIMULATION; ELECTRIC LINES; ELECTRIC RESISTANCE; ELECTRODES; HALL EFFECT; LIGHT EMITTING DIODES; MATHEMATICAL MODELS; OHMIC CONTACTS;

CIRCULAR SYMMETRY; CONTACT RESISTANCE; MODIFIED TRANSMISSION LINE MODEL (MTLM); OHMIC CONTACT PATTERNS;

GALLIUM NITRIDE;

EID: 2342469935     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1704855     Document Type: Article

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