Study of boron effects on the reaction of Co and Si1-xGex at various temperatures

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 4 I, 2000, Pages 1448-1454

  Huang, H J ^a   Chen, K M ^a   Chang, C Y ^a   Huang, T Y ^a   Chang, T C ^b   Chen, L P ^b   Huang, G W ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b National Nano Device Laboratory   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COBALT; CRYSTAL LATTICES; RAPID THERMAL ANNEALING; RELAXATION PROCESSES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; VACUUM APPLICATIONS; X RAY CRYSTALLOGRAPHY;

SILICIDATION; SILICON GERMANIDE;

SEMICONDUCTOR JUNCTIONS;

EID: 0034225738     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582368     Document Type: Article

References (28)

1. X. Xiao, C. Sturm, S. R. Parihar, S. A. Lyon, D. Meyerhofer, S. Palfery, and F. V. Shallcross, IEEE Electron Device Lett. EDL-14, 1-99 (1993).
2. G. L. Patton, J. H. Comfort, B. S. Meyerson, E. F. Crabbe, B. De Fresart, J. M. C. Stork, J. Y. C. Sun, D. L. Harame, and J. M. Burgatz, IEEE Electron Device Lett. EDL-11, 171 (1990).
3. J. M. Stork, E. J. Prinz, and C. W. Magee, IEEE Electron Device Lett. EDL-12, 303 (1991).
4. P. M. Garone, V. Venkataraman, and J. C. Sturm, Tech. Dig. Int. Electron Devices Meet. 90 (1990).
5. H. Kanaya, F. Hasegawa, E. Yamaka. T. Moriyama, and M. Nakajima, Jpn. J. Appl. Phys., Part 1 28, 544 (1989).
6. Q. Z. Hong and J. W. Mayer, J. Appl. Phys. 66, 611 (1989).
7. H. K. Liou, X. Wu, and U. Gennser, Appl. Phys. Lett. 60, 577 (1992).
8. R. D. Thompson, K. N. Tu, J. Angillelo, S. Delage, and S. S. Iyer, J. Electrochem. Soc. 135, 3161 (1988).
9. O. Thomas, F. M. D'Heurle, S. Delage, and G. Scilla, Appl. Surf. Sci. 38, 27 (1989).
10. O. Thomas, F. M. D'Heurle, and S. Delage, J. Mater. Res. 5, 1453 (1990).
11. W.-J. Qi, B.-Z. Li, W.-N. Huang, and Z.-Q. Gu, J. Appl. Phys. 77, 1086 (1995).
12. Z. Wang, Y. L. Chen, H. Ying, R. J. Nemanich, and D. E. Sayers, Mater. Res. Soc. Symp. Proc. 320, 397 (1994).
13. A. Buxbaum, M. Eizenberg, A. Raizman, and F. Schäffler, Appl. Phys. Lett. 59, 665 (1991).
14. M. C. Ridgway, R. G. Elliman, N. Hauser, J.-M. Baribeau, and T. E. Jackman, Mater. Res. Soc. Symp. Proc. 260, 857 (1992).
15. F. Lin, G. Sarcona, M. K. Hatalis, A. F. Cserhati, E. Austin, and D. W. Greve, Thin Solid Films 250, 20 (1994).
16. M. Glück, A. Schuppen, M. Rösler, W. Heinrich, J. Hersener, U. König, O. Yam, C. Cytermann, and M. Eizenberg, Thin Solid Films 270, 549 (1995).
17. A. Appelbaum, R. V. Knoell, and S. P. Murarka, J. Appl. Phys. 57, 1880 (1985).
18. G. Ottaviani, K. N. Tu, P. Psaras, and C. Nobili, J. Appl. Phys. 62, 2290 (1987).
19. S. P. Ashburn, M. C. Öztürk, G. Harris, and D. M. Maher, J. Appl. Phys. 74, 4455 (1993).
20. F. Wald and S. J. Michalik, J. Less-Common Met. 24, 277 (1971).
21. M. C. Ridgway, R. G. Elliman, R. Pascual, J. L. Whitton, and J.-M. Baribeau, Mater. Res. Soc. Symp. Proc. 311, 155 (1993).
22. C. Zaring, A. Pisch, J. Cardenas, P. Gas, and B. G. Svensson, J. Appl. Phys. 80, 2742 (1996).
23. C. Cytermann, E. Holzman, R. Brener, M. Fastow, M. Eizenberg, M. Glück, H. Kibbel, and U. König, J. Appl. Phys. 83, 2019 (1998).
24. L. P. Chen, C. T. Chou, G. W. Huang, and C. Y. Chang, Appl. Phys. Lett. 67, 3001 (1995).
25. P. L. Smith, C. M. Osburn, D. S. Wen, and G. McGuire, Mater. Res. Soc. Symp. Proc. 160, 299 (1990).
26. W. M. Chen, S. Pozder, Y. Limb, A. R. Sitaram, and B. Fiordalice, Mater. Res. Soc. Symp. Proc. 429, 163 (1996).
27. A. Eyal, R. Brener, R. Beserman, M. Eizenberg, Z. Atzmon, D. J. Smith, and J. W. Mayer, Appl. Phys. Lett. 69, 64 (1996).
28. Z. Wang, D. B. Aldrich, Y. L. Chen, D. E. Sayers, and R. J. Nemanich, Thin Solid Films 270, 555 (1995).