Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies

Solid-State Electronics

Volumn 48, Issue 8, 2004, Pages 1401-1406

  Fobelets, K ^a   Jeamsaksiri, W ^b   Papavasilliou, C ^a   Vilches, T ^a   Gaspari, V ^a   Velazquez Perez, J E ^c   Michelakis, K ^a   Hackbarth, T ^d   Konig U ^d  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b IMEC   (Belgium)

^c UNIVERSITY OF SALAMANCA   (Spain)

^d DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CORRELATION METHODS; CURRENT VOLTAGE CHARACTERISTICS; MATHEMATICAL MODELS; MOSFET DEVICES; SILICON; SILICON WAFERS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

DIFFUSION CAPACITANCE; OSCILLATION FREQUENCIES; POWER OPERATION;

HETEROJUNCTIONS;

EID: 2342462324     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.01.017     Document Type: Article

References (12)

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