Gallium-doped silicon nitride nanowires sheathed with amorphous silicon oxynitride

Scripta Materialia

Volumn 53, Issue 8, 2005, Pages 949-954

  Xu, Congkang ^a   Kim, Misuk ^a   Chun, Junghwan ^a   Kim, Dong Eon ^a   Chon, Bonghwan ^a   Hong, Sangsu ^a   Joo, Taiha ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Chemical vapor deposition (CVD); High resolution transmission electronic microscope (HRTEM)

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); GALLIUM; MOS DEVICES; OXIDATION; PHOTOLUMINESCENCE; SILICON NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPE (HRTEM); NANOWIRES; PHOTOLUMINESCENCE SPECTRA; SILICON OXYNITRIDE;

NANOSTRUCTURED MATERIALS;

EID: 23144461568     PISSN: 13596462     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.scriptamat.2005.06.024     Document Type: Article

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