Sol-gel bonding of silicon wafers: Part 1: Influence of the processing temperature on final bond morphology and interfacial energy

Thin Solid Films

Volumn 488, Issue 1-2, 2005, Pages 153-159

  Barbe C J ^a   Cassidy, D J ^a   Triani, G ^a   Latella, B A ^a   Mitchell, D R G ^a   Finnie, K S ^a   Short, K ^a   Bartlett, J R ^a   Woolfrey, J L ^a   Collins, G A ^a  

^a AUSTRALIAN NUCLEAR SCIENCE AND TECHNOLOGY ORGANISATION   (Australia)

Author keywords

Bonding; Interfaces; Silicon oxide; Sol gel

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FRACTURE TOUGHNESS; HYDROPHILICITY; INDENTATION; INTERFACIAL ENERGY; LOW TEMPERATURE EFFECTS; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SPIN COATING; TENSILE TESTING; TRANSMISSION ELECTRON MICROSCOPY;

FILM DENSITY; HYDROPHILIC BONDING; SILICON OXIDE; SILICON SUBSTRATES; SOL-GEL BONDING;

SILICON WAFERS;

EID: 23044463813     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.04.108     Document Type: Article

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