Fracture strength measurement of silicon chips

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 6 A, 1997, Pages 3374-3380

  Lee, Seong Min ^a   Sim, Sung Min ^a   Chung, Yong Wuk ^a   Jang, Young Kwan ^a   Cho, Hee Kang ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Etching; Fracture; Polishing; Si chip; Wafer back processing

Indexed keywords

MECHANICAL GRINDING; SILICON CHIP; THREE POINT BENDING TEST;

BRITTLE FRACTURE; CRACKS; ETCHING; FRACTURE TESTING; FRACTURE TOUGHNESS; GRINDING (MACHINING); MECHANICAL VARIABLES MEASUREMENT; MICROPROCESSOR CHIPS; POLISHING;

SILICON WAFERS;

EID: 0031165854     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.3374     Document Type: Article

References (4)

1. G. Hawkins, H. Berg, M. Mahalingam and G. Lewis: Proc. 25th Int. Reliability Phys. Symp., IEEE (1987) p. 216.
2. T. B. Lim: Proc. 25th Int. Reliability Phys. Symp., IEEE (1989) p. 131.
3. David Broek: Elementary Engineering Fracture Mechanics (Martinus Nijhoff Publishers, Amsterdam, 1983) p. 170.
4. C. P. Chen and M. H. Liepold: Ceram. Bull., 59 (1980) 469.