Swift heavy-ion-induced epitaxial crystallization of buried Si 3N 4 layer

Journal of Applied Physics

Volumn 98, Issue 1, 2005, Pages

  Som, T ^a   Satpati, B ^a   Sinha, O P ^a   Kanjilal, D ^b  

^a INSTITUTE OF PHYSICS   (India)

^b INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL CRYSTALLIZATION; ION-BEAM-INDUCED EPITAXIAL GROWTH; SELECTED AREA DIFFRACTION (SAD); SELECTIVE AREA CRYSTALLIZATION;

CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALLIZATION; EPITAXIAL GROWTH; HEAVY IONS; ION BEAMS; TRANSMISSION ELECTRON MICROSCOPY;

SILICON NITRIDE;

EID: 22944459204     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1949275     Document Type: Article

References (29)

1. W. Skorupa, in Physical and Technical Problems of SOI Structures and Devices, edited by, J. P. Colinge, (Kluwer Academic, Amsterdam, 1995), p. 39.
2. F. Priolo and E. Rimini, Mater. Sci. Rep. 5, 319 (1990).
3. J. Linnros, B. Svensson, and G. Holmen, Phys. Rev. B 0163-1829 10.1103/PhysRevB.30.3629 30, 3629 (1984); J. Linnros and G. Holmen, J. Appl. Phys. 59, 1513 (1986).
4. J. Linnros, B. Svensson, and G. Holmen, Phys. Rev. B 0163-1829 10.1103/PhysRevB.30.3629 30, 3629 (1984); J. Linnros and G. Holmen, J. Appl. Phys. 59, 1513 (1986).
5. J. S. Williams, R. G. Elliman, N. L. Brown, and T. E. Seidel, Phys. Rev. Lett. 55, 1482 (1985).
6. K. A. Jackson, J. Mater. Res. 3, 1218 (1988).
7. J. Nakata, Phys. Rev. B 43, 14643 (1991).
8. J. Nakata, J. Appl. Phys. 79, 682 (1996).
9. J. K. N. Lindner, K. Voltz, and B. Stritzker, Mater. Sci. Forum 248-249, 73 (1997).
10. G. S. Virdi, B. C. Pathak, D. K. Avasthi, and D. Kanjilal, Nucl. Instrum. Methods Phys. Res. B 187, 189 (2002).
11. V. Heera, J. Stoemenos, R. Kögler, and W. Skorupa, J. Appl. Phys. 77, 2999 (1995).
12. P. K. Sahoo, T. Som, D. Kanjilal, and V. N. Kulkarni, Nucl. Instrum. Methods Phys. Res. B (in press).
13. G. Cembali, P. G. Merli, and F. Zignani, Appl. Phys. Lett. 38, 808 (1981).
14. M. Berti, A. V. Drigo, G. Lulli, P. G. Merli, and M. Vittori Antisari, Phys. Status Solidi A 94, 85 (1986).
15. M. Berti, A. V. Drigo, G. Lulli, P. G. Merli, and M. Vittori Antisari, Phys. Status Solidi A 97, 77 (1986).
16. http:www.srim.org
17. R. A. Yankov, F. F. Komarov, and S. A. Petrov, Vacuum 44, 1077 (1993).
18. M. Levalois and P. Mary, Nucl. Instrum. Methods Phys. Res. B 0168-583X 10.1016/S0168-583X(99)00243-8 156, 64 (1999), and references therein; W. Wesch, A. Kamarou, and E. Wendler, Nucl. Instrum. Methods Phys. Res. B 225, 111 (2004).
19. M. Levalois and P. Mary, Nucl. Instrum. Methods Phys. Res. B 0168-583X 10.1016/S0168-583X(99)00243-8 156, 64 (1999), and references therein; W. Wesch, A. Kamarou, and E. Wendler, Nucl. Instrum. Methods Phys. Res. B 225, 111 (2004).
20. JCPDS-International Center for Diffraction Data, Powder Diffraction File No. 41-0360 (ICDD, Newton Square, PA, 2000).
21. K. Watanabe, Y. Anzai, N. Nakanishi, T. Yamazaki, K. Kuramochi, K. Mitsuishi, K. Furuya, and I. Hashimoto, Appl. Phys. Lett. 84, 4520 (2004).
22. T. K. Chini, D. P. Datta, B. Satpati, M. Tanemura, and F. Okuyama, Nucl. Instrum. Methods Phys. Res. B 212, 477 (2003).
23. F. Seitz and J. S. Köhler, Solid State Phys. 2, 305 (1956).
24. W. Bolse, B. Schattat, and A. Feyh, Appl. Phys. A: Mater. Sci. Process. 77, 11 (2003).
25. M. Toulemonde, J. M. Costantini, C. Dufor, A. Meftah, E. Paumier, and F. Studer, Nucl. Instrum. Methods Phys. Res. B 0168-583X 166, 37 (1996); G. Szenes, Nucl. Instrum. Methods Phys. Res. B 191, 54 (2002).
26. M. Toulemonde, J. M. Costantini, C. Dufor, A. Meftah, E. Paumier, and F. Studer, Nucl. Instrum. Methods Phys. Res. B 0168-583X 166, 37 (1996); G. Szenes, Nucl. Instrum. Methods Phys. Res. B 191, 54 (2002).
27. A. Barbu, A. Dunlop, D. Lesuer, and R. S. Averback, Europhys. Lett. 15, 37 (1991).
28. Ch. Dufour, J. Phys.: Condens. Matter 5, 4573 (1993).
29. G. D. Watkins, Radiation Damage in Semiconductors (Dunod, Paris, 1985), p. 97.