Swift heavy ion-induced recrysallization of silicon-on-insulator (SOI) structures

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 187, Issue 2, 2002, Pages 189-200

  Virdi, G S ^a   Pathak, B C ^a   Avasthi, D K ^b   Kanjilal, D ^b  

^a CENTRAL ELECTRONICS ENGINEERING RESEARCH INSTITUTE   (India)

^b INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; CRYSTALLIZATION; ELECTRIC BREAKDOWN OF SOLIDS; HEAVY IONS; INTERFACES (MATERIALS); ION BEAMS; ION BOMBARDMENT; ION IMPLANTATION; PARAMAGNETIC RESONANCE; SEMICONDUCTING SILICON; SILICON NITRIDE; STOICHIOMETRY; SUBSTRATES; SYNTHESIS (CHEMICAL);

ION-INDUCED RECRYSTALLIZATION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0036467267     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00925-9     Document Type: Article

References (19)