Redistribution of Er implanted into Si(1 0 0): Correlation with implantation induced damage

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 212, Issue 1-4, 2003, Pages 477-482

  Chini, T K ^a   Datta, D P ^a   Satpati, B ^b   Tanemura, M ^c   Okuyama, F ^c  

^a SAHA INSTITUTE OF NUCLEAR PHYSICS   (India)

^b INSTITUTE OF PHYSICS   (India)

^c NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; ERBIUM; SECONDARY ION MASS SPECTROMETRY; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

ANNEALING SAMPLES;

ION IMPLANTATION;

EID: 0242363784     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)01499-X     Document Type: Conference Paper

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