Ion beam induced epitaxial crystallization of buried SiC layers in silicon

Materials Science Forum

Volumn 248-249, Issue , 1997, Pages 73-78

  Lindner, J K N ^a   Volz, K ^a   Stritzker, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

Amorphization; Buried Layers; Epitaxy; IBIEC; IBIIA; Ion Beam Induced Crystallization; Ion Implantation; SiC; Silicon; TEM

Indexed keywords

AMORPHIZATION; CRYSTALLIZATION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); ION BEAMS; ION BOMBARDMENT; ION IMPLANTATION; NUCLEATION; SEMICONDUCTING SILICON; SUBSTRATES; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION (IBIEC);

SILICON CARBIDE;

EID: 0030692540     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.248-249.73     Document Type: Article

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