Low-temperature epitaxial growth of Si by electron cyclotron resonance chemical vapor deposition

Thin Solid Films

Volumn 381, Issue 1, 2001, Pages 22-30

  Platen, J ^a   Selle, B ^a   Sieber, I ^a   Brehme, S ^a   Zeimer, U ^b   Fuhs, W ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CRYSTALLOGRAPHY; ELECTRON CYCLOTRON RESONANCE; EPITAXIAL GROWTH; FILM GROWTH; INTERFACES (MATERIALS); PHASE TRANSITIONS;

ELECTRON CYCLOTRON RESONANCE CHEMICAL VAPOR DEPOSITION (ECR-CVD); LOW-TEMPERATURE EPITAXIAL GROWTH;

AMORPHOUS FILMS;

EID: 0035147886     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01214-1     Document Type: Article

References (34)

1. Jorke H., Herzog H.-J., Kibbel H. Phys. Rev. B. 40:1989;2005.
2. Eaglesham D.J., Gossmann H.-J., Cerullo M. Phys. Rev. Lett. 65:1990;1227.
3. Eaglesham D.J. J. Appl. Phys. 77:1995;3597.
4. Ramana Murty M.V., Atwater H.A., Kellock A.J., Baglin J.E.E. Appl. Phys. Lett. 62:1993;2566.
5. Adams D.P., Yalisove S.M., Eaglesham D.J. Appl. Phys. Lett. 63:1993;3571.
6. Varhue W.J., Rogers J.L., Andry P.S., Adams E. Appl. Phys. Lett. 68:1996;349.
7. Comfort J.H., Reif R. J. Electrochem. Soc. 136:1989;2398.
8. Lee N.-E., Tomasch G.A., Greene J.E. Appl. Phys. Lett. 65:1994;3236.
9. Lee N.-E., Tomasch G.-A., Xue G., Markert L.C., Greene J.E. Appl. Phys. Lett. 64:1994;1398.
10. Bergmann R.B., Zacsek C., Jensen N., Oelting S., Werner J.H. Appl. Phys. Lett. 72:1998;2996.
11. Buaud P.P., Hu Y.Z., Spanos L., Irene E.A., Christensen K.N., Venables D., Maher D.M. J. Vac. Sci. Technol. B. 13:1995;1442.
12. DeBoer S.J., Dalal V.L., Chumanov G., Bartels R. Appl. Phys. Lett. 66:1995;2528.
13. E. Conrad, L. Elstner, W. Fuhs, W. Henrion, P. Müller, J. Poortmans, B. Selle, U. Zeimer, in: H.A. Ossenbrink, P. Helm, E. Ehmann (Eds.), 14th European Photovoltaic Solar Energy Conference, Barcelona, Spain, 1997, p. 1411.
14. Kasai N., Endo N. J. Electrochem. Soc. 139:1992;1983.
15. Mui D.S.L., Fang S.F., Morkoc H. Appl. Phys. Lett. 59:1991;1887.
16. Nagai I., Takahagi T., Ishitami A., Kuroda H., Yoshikawa M. J. Appl. Phys. 64:1988;5183.
17. Rogers J.L., Andry P.S., Varhue W.J., McGaughnea P., Adams E., Kontra R. Appl. Phys. Lett. 67:1995;971.
18. Tae H.-S., Hwang S.-H., Park S.-J., Yoon E., Whang K.-W. Appl. Phys. Lett. 64:1994;1021.
19. Yamada H., Torii Y. J. Appl. Phys. 64:1988;702.
20. Smith D.L., Chen C.C., Anderson G.B., Hagstrom S.B. Appl. Phys. Lett. 62:1993;570.
21. Adams D.P., Yalisove S.M. J. Appl. Phys. 76:1994;5185.
22. Karpenko O.P., Yalisove S.M., Eaglesham D.J. J. Appl. Phys. 82:1997;1157.
23. P. Müller, E. Conrad, T.R. Omstead, P. Kember, in: W. Freiesleben, W. Palz, H.A. Ossenbrink, P. Helm (Eds.), 13th European Photovoltaic Solar Energy Conference, Nice, France, 1995, p. 1742.
24. Tagaki S. J. Phys. Soc. Jpn. 26:1969;1239.
25. Taupin D. Bull. Soc. Fr. Mineral. Crystallogr. 87:1964;469.
26. Weir B.E., Freer B.S., Headrick R.L., Eaglesham D.J., Gilmer G.H., Beuk J., Feldman L.C. Appl. Phys. Lett. 59:1991;204.
27. Venkatasubramanian R., Gorantla S., Muthuvenkatraman S., Dorsey D.L. J. Appl. Phys. 80:1996;6219.
28. Copel M., Tromp R.M. Phys. Rev. Lett. 72:1994;1236.
29. Asoka-Kumar P., Szpala S., Nielsen B., Szeles C., Lynn K.G., Lanford W.A., Shepard C.A., Gossmann H.-J. Phys. Rev. B. 51:1995;4630.
30. Birkholz M., Platen J., Sieber I., Bohne W., Röhrich J., Fuhs W. Mater. Res. Soc. Proc. 557:1999;555.
31. Matsuda A. J. Non-Cryst. Solids. 59/60:1983;767.
32. Lee N.-E., Cahill D.G., Greene J.E. Phys. Rev. B. 53:1996;7876.
33. Taylor N., Kim H., Spila T., Eades J.A., Glass G., Desjardins P., Greene J.E. J. Appl. Phys. 85:1999;501.
34. Yamamoto Y. Phys. Rev. B. 50:1994;8534.