|
Volumn 36, Issue 4 B, 1997, Pages
|
Deep-level luminescence in Czochralski-grown silicon crystals after long-term annealing at 450 °C
a a a a a a |
Author keywords
[No Author keywords available]
|
Indexed keywords
ANNEALING;
CRYSTAL GROWTH FROM MELT;
CRYSTALS;
CURVE FITTING;
ELECTRON ENERGY LEVELS;
EMISSION SPECTROSCOPY;
MORPHOLOGY;
OXYGEN;
PHOTOLUMINESCENCE;
PRECIPITATION (CHEMICAL);
THERMAL EFFECTS;
CZOCHRALSKI GROWN SILICON CRYSTALS;
DEEP LEVEL LUMINESCENCE;
SPECTRAL SHAPE ANALYSIS;
SEMICONDUCTING SILICON;
|
EID: 0031121720
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.36.l494 Document Type: Article |
Times cited : (9)
|
References (16)
|