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Volumn 30, Issue SUPPL., 2001, Pages 562-563

Investigation of Ga segregation at SiO2-Si interface

Author keywords

Interface; Near surface; Segregation; Width of the exhausted region

Indexed keywords


EID: 22844431763     PISSN: 1002185X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (1)

References (10)
  • 1
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    • Kurtz A D, Gravel C L. Diffusion of Gallium in Silicon [J]. Journal of Applied Physics, 1958, 29(10): 1 456-1 459
    • (1958) Journal of Applied Physics , vol.29 , Issue.10 , pp. 1456-1459
    • Kurtz, A.D.1    Gravel, C.L.2
  • 3
    • 0018530025 scopus 로고
    • Controlled gallium diffusion in silicon by an open-tube system [J]
    • Ghoshagore R N. Controlled Gallium Diffusion in Silicon by an Open-tube System [J] . Solid State Technology, 1979,22(10): 877-885
    • (1979) Solid State Technology , vol.22 , Issue.10 , pp. 877-885
    • Ghoshagore, R.N.1
  • 4
    • 0029260236 scopus 로고
    • 2/Si system and improvement of electron device performance [J]
    • 2/Si System and Improvement of Electron Device Performance [J]. Chinese Journal of Semiconductors 1995, 16(3): 235-240
    • (1995) Chinese Journal of Semiconductors , vol.16 , Issue.3 , pp. 235-240
    • Liu, X.1    Zhao, F.2    Xue, C.3
  • 5
    • 24044436492 scopus 로고    scopus 로고
    • Improvement on the on-state characteristics of fast thyristor by using open-tube ga-diffusion[J]
    • Pei Suhua , Xue Chengshan, Zhao Shanqi. Improvement on the On-state Characteristics of Fast Thyristor by Using Open-tube Ga-diffusion[J]. Research & Progress of SSE, 1997,17(3): 168-271
    • (1997) Research & Progress of SSE , vol.17 , Issue.3 , pp. 168-271
    • Pei, S.1    Xue, C.2    Zhao, S.3
  • 6
    • 0032277609 scopus 로고    scopus 로고
    • Application of open-tube ga-diffusion system in power semiconductor devices [J]
    • Pei Suhua, Xue Chengshan, Zhao Shanqi. Application of Open-Tube Ga-diffusion System in Power Semiconductor Devices [J] .Chinese Journal of Semiconductors, 1998,19(12): 941-944
    • (1998) Chinese Journal of Semiconductors , vol.19 , Issue.12 , pp. 941-944
    • Pei, S.1    Xue, C.2    Zhao, S.3
  • 7
    • 24044452518 scopus 로고    scopus 로고
    • The improvement of the voltage properties of high speed thyristors by forming steps distribution of gallium[J]
    • Pei Suhua, Zhao Shanqi, Xue Chengshan . The Improvement of the Voltage Properties of High Speed Thyristors by Forming Steps Distribution of Gallium[J]. Bandaoti Zazhi, 1998, 23(4): 30-33
    • (1998) Bandaoti Zazhi , vol.23 , Issue.4 , pp. 30-33
    • Pei, S.1    Zhao, S.2    Xue, C.3
  • 8
    • 24044476529 scopus 로고
    • Beijing:People's Educational Press
    • Physical Department of Xiamen University. Process and Mechanism of Semicondutor Devices[M]. Beijing:People's Educational Press,1977: 72
    • (1977) Process and Mechanism of Semicondutor Devices[M] , pp. 72


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.