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Volumn 42, Issue 4 A, 2003, Pages 1705-1708
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Uniform formation of two-dimensional and three-dimensional InAs Islands on GaAs by molecular beam epitaxy
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Author keywords
Compressive strain; InAs; Molecular beam epitaxy; Multi nucleation; Quantum dot; Self size limiting; Stranski Krastanov growth mode; Uniformity
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
DESORPTION;
MOLECULAR BEAM EPITAXY;
NUCLEATION;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR QUANTUM DOTS;
SUBSTRATES;
TEMPERATURE;
THREE DIMENSIONAL;
TWO DIMENSIONAL;
COMPRESSIVE STRAIN;
INDIUM ARSENIDE;
SHAPE TRANSITION;
STRANSKI-KRASTANOV GROWTH MODE;
SEMICONDUCTING INDIUM COMPOUNDS;
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EID: 0038545893
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.42.1705 Document Type: Article |
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Times cited : (6)
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References (9)
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