SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 607, Issue , 2000, Pages 77-82

Electrical characterization of InAs/(GaIn)Sb infrared superlattice photodiodes for the 8 to 12 μm range

(6) Burkle L a Fuchs, F a Kiefer, R a Pletschen, W a Sah, R E a Schmitz, J a

a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CURRENT DENSITY; DIFFUSION IN SOLIDS; INFRARED RADIATION; LEAKAGE CURRENTS; MAGNETIC FIELD EFFECTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES;

GALLIUM INDIUM ANTIMONIDE; INDIUM ARSENIDE;

PHOTODIODES;

EID: 0033683332 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (34)

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