Ionizing radiation effects on MOSFET thin and ultra-thin gate oxides

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 473-476

  Paccagnella, Alessandro ^a   Cester, Andrea ^a   Cellere, Giorgio ^a  

^a UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; IONIZATION; LEAKAGE CURRENTS; LOGIC GATES; RADIATION EFFECTS; ULTRATHIN FILMS; DEGRADATION; DRAIN CURRENT; GATES (TRANSISTOR); IRRADIATION; MOS DEVICES; MOSFET DEVICES; STATIC RANDOM ACCESS STORAGE;

FLOATING GATE MEMORY ARRAYS; RADIATION INDUCED LEAKAGE CURRENT (RILC); RADIATION SOFT BREAKDOWN (RSB); ULTRATHIN-GATE OXIDES;

MOSFET DEVICES; IONIZING RADIATION;

DEGRADATION MECHANISM; DEVICE LIFETIME; GATE VOLTAGES; GATE-LEAKAGE CURRENT; IONIZING RADIATION EFFECTS; LEAKAGE RADIATION; MOSFETS; RADIATION INDUCED LEAKAGE CURRENTS; RADIATION SOFT BREAKDOWNS; ULTRA-THIN GATE OXIDES;

EID: 21644482654     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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