Imaging one-dimensional and two-dimensional planar photodiode detectors fabricated by ion milling molecular beam epitaxy CdHgTe

Journal of Electronic Materials

Volumn 34, Issue 6, 2005, Pages 922-927

  Haakenaasen, R ^a   Steen, H ^a   Selvig, E ^a   Lorentzen, T ^a   Van Rheenen, A D ^a   Trosdahl Iversen, L ^a   Syversen, H ^a   Hall, D ^b   Gordon, N ^b  

^a NORWEGIAN DEFENCE RESEARCH ESTABLISHMENT FFI   (Norway)

^b QINETIQ   (United Kingdom)

Author keywords

CdHgTe; CdZnTe; HgCdTe; Ion milling; IR detector; Linear array; Long wavelength infrared (LWIR); Mid wavelength infrared (MWIR); Molecular beam epitaxy; n on p diodes; Photodiodes; Planar diodes; Two dimensional (2 D) array

Indexed keywords

CADMIUM COMPOUNDS; DETECTORS; DIODES; DOPING (ADDITIVES); ELECTRIC CURRENTS; ELECTROPLATING; IMAGING TECHNIQUES; INFRARED RADIATION; MOLECULAR BEAM EPITAXY; QUANTUM THEORY; THERMAL EFFECTS; ZINC SULFIDE;

CDHGTE; CDZNTE; HGCDTE; ION MILLING; LINEAR ARRAY; LONG WAVELENGTH INFRARED (LWIR); MID-WAVELENGTH INFRARED (MWIR); N-ON-P DIODES; PLANAR DIODES; TWO-DIMENSIONAL (2-D) ARRAY;

PHOTODIODES;

EID: 21644482314     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0043-3     Document Type: Conference Paper

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