Modification of Hg1-xCdxTe and related materials by ion-beam treatment

Journal of Alloys and Compounds

Volumn 371, Issue 1-2, 2004, Pages 153-156

  Mynbaev, K D ^a   Ivanov Omskii, V I ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Electrochemical reactions; Point defects; Semiconductors

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTROCHEMISTRY; EPITAXIAL GROWTH; ION BEAMS; POINT DEFECTS; SEMICONDUCTOR MATERIALS;

ELECTROCHEMICAL REACTIONS; ION BEAM TREATMENT (IBT); SEMICONDUCTOR TECHNOLOGY; SURFACE MILLING;

MERCURY COMPOUNDS;

EID: 2342557222     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2003.07.034     Document Type: Conference Paper

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